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Code:
TOH
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Time Slot/Poster Number:
4:30 - 5:00 pm
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Session:
Tip-Enhanced and Near-Field Raman I
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Near-field Raman Microscopy and Spectroscopy of Carbon Nanotubes
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| Lukas Novotny1; Gustavo Cancado2; Ado Jorio2; Achim Hartschuh3
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1University of Rochester, Rochester, NY; 2Universidade Federal de Minas Gerais, Belo Horizonte, Brazil; 3Ludwig-Maximilians-Universitat Muenchen, Muenchen, Germany
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| View Abstract PDF |
| Summary |
We use a laser-irradiated optical antenna, such as a metal tip, to establish a localized optical interaction with a sample surface. A hyperspectral image of the sample surface is recorded by raster-scanning the antenna over the sample surface and acquiring a Raman scattering spectrum pixel-by-pixel. We apply this type of near-field spectroscopy to map out phonons and excitons in single-walled carbon nanotubes with a resolution of 10nm. The method is able to resolve defects in the tube structure as well as interactions with the local environment. We observe that defects lead to a band renormalization and to trapping of excitons.
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Code:
TOH
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Time Slot/Poster Number:
5:00 - 5:30 pm
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Session:
Tip-Enhanced and Near-Field Raman I
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Tip-pressurized near-field Raman microscopy:
a breakthrough towards molecular resolution
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| Satoshi Kawata; Prabhat Verma; Takaaki Yano
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Osaka University, Toyonaka, Osaka, Japan
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| View Abstract PDF |
| Summary |
Raman microscopy achieves new and exciting aspects when it is combined with the near-field techniques, as it goes beyond the limits of conventional optical microscopy, in terms of both the spatial resolution and scattering intensity.
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Code:
TOH
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Time Slot/Poster Number:
5:30 - 5:50 pm
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Session:
Tip-Enhanced and Near-Field Raman I
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Raman Spectroscopy of Single Semiconductor Nanowires: From Confocal Microscopy to TERS
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| François Lagugné-Labarthet1; David Talaga2
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1University of Western Ontario, London, Canada; 2Université Bordeaux 1, Talence, France
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| View Abstract PDF |
| Summary |
Probing the vibrational signature of nanomaterials with a spatial resolution in the range of 10-100 nm is of tremendous interest to understand the properties of nanoscale materials due to possible confinement effects.Surpassing the resolution limit of conventional optical microscopy by a combination of scanning near-field techniques with confocal microscopy is a challenge that presents many advantages in terms of spatial resolution and acquisition time improvements. We report the study of one-dimensional semiconductor-nanowires of gallium nitride (GaN) and silicon (Si). The dimensions of the wires vary between 90 nm to 200 nm in diameter and several microns in length.
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