Code: ThP24	Time Slot/Poster Number: 121	Session: Solid State, Semiconductors and Nanoparticles II
Plasma Optics of Aggregated Tetrahexahedral Gold Nanocrystals: A Computational Study
Ting-Ting You; Peng-Gang Yin; Jing Li; Lin Guo
School of Chemistry and Environment, Beijing Unive, Beijing, China
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Summary
In this paper, Tetrahexahedral (THH) gold nanocrystals (NCs) dimers were studied for their unique optical properties. The E-field distributions of THH dimers that arranged in different ways were simulated using 3D-FDTD method. Results indicated the electromagnetic enhancement near surface was largely confined to the gaps between adjacent THH NCs, where E-field enhancement factor could reach a magnitude of 2~3.

Code: ThP24	Time Slot/Poster Number: 122	Session: Solid State, Semiconductors and Nanoparticles II
Evaluation of heavily doped poly-Si thin films recrystallized by excimer laser annealing using UV/visible Raman spectroscopy
Takashi Kubo1; Atsushi Ogura1; Daisuke Kosemura1; Toshiharu Suzuki2; Takashi Noguchi2; Tomoyuki Miyahira2
1School of Science and Technologies, Meiji Universi, Kawasaki, Japan; 2Faculty of Engineering, University of the Ryukyus, 1 Senbaru Nishihara, Okinawa 903-0213, Japan
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Summary
we evaluate the crystal quality of excimer laser annealed poly-Si using UV/visible Raman spectroscopy. About the P-doped poly-Si films, there was a good correlation between sheet-resistance and the crystal quality. However, the correlation was not clear about the B-doped poly-Si films evaluated by visible-Raman spectroscopy. This was because of so-called Fano interference with high density holes. Therefore, we can confirm the doped B was highly activated. Using UV-laser, Fano interference was suppressed thanks to the resonance effect. Thus, the relation between the sheet-resistance and the crystal quality showed good correlation.

Code: ThP24	Time Slot/Poster Number: 123	Session: Solid State, Semiconductors and Nanoparticles II
Raman Spectra of High Aspect Ratio Double- and Single-Clamped Silicon Nanowires
Hang Chen; Craig Keasler; Anna Swan; Ozgur Ozsun
Boston University, Boston, MA
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Summary
Raman spectroscopy has been utilized to measure the stress in Si nano-wires, and the enhanced Raman scattering on the Si nano-wire was investigated.

Code: ThP24	Time Slot/Poster Number: 124	Session: Solid State, Semiconductors and Nanoparticles II
Raman Scattering Study Of Surface Modification Of Porous III-V Semiconductors
Natalia Berezovska
Kyiv National Taras Shevchenko University, Kyiv, Ukraine
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Summary
We report on the study of surface modification in porous III-V semiconductors by Raman spectroscopy. Raman spectra of porous GaAs, GaP and InP samples have been compared. Raman spectra of the porous n-GaAs (100) and n-InP (100) surfaces contain lines related to the transversal and longitudinal optical phonons modes. The reasons for the enhancement of observed Raman bands could be: decrease of reflection at porous surface; breaking of selection rules for the TO mode at disordered surface; depleted porous layer with lower light absorption. Surface phonons were observed on the low frequency wings of LO-mode of n-InP and n-GaP samples.

Code: ThP24	Time Slot/Poster Number: 125	Session: Solid State, Semiconductors and Nanoparticles II
Nanostructured Polymer Films Doped with Cobalt-ferrite Nanoparticles: a Raman Study
Gustavo B. Alcantara1; Leonardo G. Paterno1; Fernando J. Fonseca2; Emilia C. D. Lima3; Paulo C. Morais1; Maria A. G. Soler1
1Universidade de Brasilia, Brasilia, Brazil; 2Universidade de Sao Paulo, Sao Paulo, Brazil; 3Universidade Federal de Goias, Goiania, Brazil
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Summary
Novel magnetic nanocomposite films were produced via the electrostatic layer-by-layer assembly of positively-charged cobalt ferrite nanoparticles and PSS. Raman spectroscopy was employed to provide information of the chemical structure of the ultra-film due its high sensitivity. A well-resolved fingerprint of the cobalt ferrite structure is seen in the nanocomposite spectrum, with 5 Raman peaks 328, 499, 558, 619 and 692 cm-1. Raman measurements showed that we can get a fingerprint of cobalt ferrite nanoparticles from the nanostructured films without further treatment as annealing.

Code: ThP24	Time Slot/Poster Number: 126	Session: Solid State, Semiconductors and Nanoparticles II
Brillouin scattering studies of gallium nitride and Indium gallium nitride
Tsung Han Wu1; Zhe C. Feng1; Fangfei Li2; Chung Cherng Lin3; Ian Ferguson4; Ray Hua Horng5; Weijie Lu6
1National Taiwan University, Taipei, Taiwan; 2Jilin University, Changchun, China; 3Academia Sinica, Taipei, Taiwan; 4University of North Carolina, Charlotte, USA; 5Cheng Kung University, Tainan, Taiwan; 6Fisk University, Nashville, USA
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Summary
Brillouin scattering technology has been employed to study GaN and InGaN materials grown on sapphire. Frequency shifts are obtained through the Brillouin scattering measurements. Further, it is feasible to calculate the acoustic velocity and then elastic constants Cij are computed. Cij values represent the relationship of strain and stress. Compared with the elastic constant of GaN and InGaN. Our studies have shown how the lattice properties of InGaN change with indium concentration.

Code: ThP24	Time Slot/Poster Number: 127	Session: Solid State, Semiconductors and Nanoparticles II
Raman Scattering Of La8+xBa2-xSi6-y(Al, Mg)yO26+x/2 Apatites
Annick Rubbens1; Stephanie Guillot2
1Unité de Catalyse et Chimie du Solide, CNRS UMR818, Villeneuve D'ascq, France; 2CEA - le Ripault, MONT, France
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Summary
Lanthanum silicates oxyapatite materials are generating considerable interest owing to their potential application as electrolytes in SOFCs operating at intermediate temperature. These materials, with the general formula La10-x□x(SiO4)6O2+δ , are chemically stable and exhibit good ionic conduction properties. The conduction mechanism of these materials is still a subject for controversy. An interstitial oxygen mechanism is admitted but the location of this oxygen and the migration pathways remain unclear. To complete the study on this complex material, new insights at the local structure were needed and Raman scattering has been a powerful technique.

Code: ThP24	Time Slot/Poster Number: 128	Session: Solid State, Semiconductors and Nanoparticles II
Combined Raman Scattering and TEM Studies on Polytype Transformation in SiC from Heavily Nitrogen Doping
Jingli Chen1; Siou-Cheng Lien2; Zhe C. Feng2; C. H. Kuan2; Ray-Hua Horng3; Weijie Lu4; Jian H. Zhao5
1National University of Singapore, Singapore, Singapore; 2National Taiwan University, Taipei, Taiwan; 3National Cheng Kung University, Tainan, Taiwan; 4Fisk University, Nashville, USA; 5Rutgers University, Piscataway, USA
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Summary
Raman scattering in combination with high resolution TEM is employed to study the polytype structural variations of SiC bulk wafers with different Nitrogen doping levels, prepared by physical vapor deposition. The initial growth conditions were used to produce 6H-poly type SiC, which has been approved for the undoped and lightly doped materials. However, when extreme high N-dopants were applied, the obtained wafer was found, in some regimes, with 4H- and 15R-polytype features, by Raman scattering and TEM measurements, revealing that extremely high inducement of N in the reactor leads to the polytype transformation in the resulted SiC crystal.

Code: ThP24	Time Slot/Poster Number: 129	Session: Solid State, Semiconductors and Nanoparticles II
Synthesis of Hexagonal, Monoclinic and Orthorhombic Tungsten Oxide Thin Films and Construction of Transmissive Electrochromic Devices
Subramanian Balaji1; Yahia Djaoued1; Ralf Brüning2; André-Sébastien Albert1; Richard Z. Ferguson1
1Université de Moncton, Shippagan, Canada; 2Physics Department, Mount Allison University,, Sackville, NB, Canada
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Summary
Electrochromic (EC) devices based on WO3 undergo reversible optical modulation when intercalated with small cations such as Li+. In this presentation, we describe the synthesis of mesoporous WO3 thin films using tungstic acid as precursor. Calcination of the films at 400, 500 and 600 °C resulted in three different nanocrystalline phases, such as hexagonal (h), monoclinic (m), and orthorhombic (o) WO3. Electrochromic devices based on these crystalline phases have been constructed. Detailed Micro-Raman studies of the intercalation and deintercalation of lithium ions in the EC active layer of the device as a function of the applied voltages have been performed.

Code: ThP24	Time Slot/Poster Number: 130	Session: Solid State, Semiconductors and Nanoparticles II
Raman Scattering of Multiferroic BiFeO3: Thin Film and Single Crystal
R Palai1; R.S Katiyar1; H. Schmid3; J.F. Scott2
1University of Puerto Rico, San Juan, Puerto Rico; 2University of Cambridge, Cambridge, UK; 3University of Geneva, Geneva, Switzerland
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Summary
Our aim in the present work is to examine an as-grown single-domain single crystal to exclude the effect of mechanical polishing and an epitaxial thin film to test the synchrotron x-ray results spectroscopically, and to compare with good single-domain single-crystal results. Since conventional x-ray diffraction (XRD) is not very sensitive to detect the crystal structure of thin films, giving uncertain positioning of the oxygen ions, we used micro-Raman spectroscopy (81K -1300K) to explore the structural insights of the epitaxial thin films and single-domain single crystal.

Code: ThP24	Time Slot/Poster Number: 131	Session: Solid State, Semiconductors and Nanoparticles II
Raman Investigation on Size Dependent Electron-Phonon Coupling in LiCoFeO4 Nanoparticles
Animesh Ojha
Motilal Nehru National Institute of Technology, Allahabad, India
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Summary
Raman spectra of different size LiCoFe2O4 nanoparticles have been recorded in the range of 200-800 cm-1 using a Renishaw invia Raman spectrometer equipped with a high-performance CCD detector. Five well resolved bnads were observed in Raman spectra of each size nanoparticles. The Rmand band ~707 cm-1 exhibits a asymetrical feature towards lower wavenumber side, which may be attributed to the elctron-phnon coupling. The coupling strength goes on decreasing by reducing the particles size.

Code: ThP24	Time Slot/Poster Number: 132	Session: Solid State, Semiconductors and Nanoparticles II
µ-Raman study of nanosized zinc ferrite above the threshold of electronic stopping regime
Jitendra Singh1; Gagan Dixit1; Ramesh Srivastava1; Hari Agrawal1; Ravi Kumar2
1G.B. Pant University of Agriculture & Technology,, U. S. Nagar, India; 2National Institute of Technology, Hameerpur, India
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Summary
Zinc ferrite nanoparticles of different size were irradiated with 200 MeV Ag15+ beam in high vacuum by Pelletron Accelerator at IUAC, New Delhi at three different fluences viz. 1×1012, 2×1012 and 4×1012 ions/cm2 and studied by µ-Raman spectroscopy. This ion beam is able to produce columnar defects in the system. We observe splitting in the mode F2g (2), F2g(3) and A1g, however the mode F2g(1) and A1g are absent in the most of the samples. It has been observed that the modes in the Raman spectra of the samples are not affected much by the irradiation of ion beam.

Code: ThP24	Time Slot/Poster Number: 133	Session: Solid State, Semiconductors and Nanoparticles II
Phonon Confinement in Anatase TiO2 Nanocrystals: A perspective
Subramanian Balaji1; Yahia Djaoued1; Sihem Haya1; Srinivasan Priya1; Jacques Robichaud1; Ralf Brüning2
1Université de Moncton, Shippagan, Canada; 2Physics Department, Mount Allison University,, Sackville, NB, Canda
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Summary
Recently we reported on the synthesis of mesoporous nanorods of nanocrystalline anatase TiO2 at temperatures lower than 100°C and on the mechanism of ethylene glycol mediated nanocrystalline anatase TiO2 formation. In this paper we report the micro-Raman spectroscopic studies on nanocrystalline anatase TiO2 nanorods, which were heat treated at temperatures ranging from 100 °C to 900 °C. A systematic study on the contribution of laser induced heating to the Raman line shape and peak position in the case of micro Raman experiments is performed and reported.

Code: ThP24	Time Slot/Poster Number: 134	Session: Solid State, Semiconductors and Nanoparticles II
Stress Tensor Measurements by Raman Spectroscopy with High-Numerical-Aperture Immersion Lens
Daisuke Kosemura; Atsushi Ogura
Meiji Univ., Kawasaki, Japan
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Summary
We demonstrate successful excitation of transverse-optical (TO) phonons by focusing light at an oblique angle of incidence with a high-numerical-aperture oil-immersion lens on a (001) Si substrate of a strained-Si on insulator (SSOI). Using this technique, TO phonons are excited, even under the backscattering configuration. The wavenumbers of the TO phonons in SSOI thus excited are different from those of the longitudinal-optical (LO) phonon. This result indicates the coefficients of Raman wavenumber shift and biaxial stress are different in the LO- and TO-phonon modes. The TO phonons allow us to study unknown stress states in Si.

Code: ThP24	Time Slot/Poster Number: 135	Session: Solid State, Semiconductors and Nanoparticles II
Investigation of Coherent Vibrational Dynamics in Gold Clusters
Abdelkrim Benabbas; Karunakaran Venugopal; Alexander Demidov; Paul Champion
Department of Physics, Northeastern University, Boston, MA
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Summary
We investigate the low frequency mode activity of two ligand protected clusters Au55 and Au11, in the liquid phase by using vibrational coherence spectroscopy (VCS). We show that the low frequency modes are highly dependent on the size and the symmetry of the clusters and can be used to uniquely determine their geometric structures.

Code: ThP24	Time Slot/Poster Number: 136	Session: Solid State, Semiconductors and Nanoparticles II
Raman Scattering from Industrially Prepared Nanometer Sized Particles of Chromium Doped Alumina
Robert Withnall1; Paul Harris1; George Fern1; Jack Silver1; Paul Reip2; Alastair Godfrey2
1Brunel University, Uxbridge, United Kingdom; 2Intrinsiq Materials Ltd, Farnborough, UK
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Summary
Nanometer sized crystals of Al2O3:Cr were synthesized by passing precursor oxide powders through a plasma discharge at ca. 9000°C by Intrinsiq Materials Ltd. We have found that the as-prepared crystals are a mixture of alpha-Al2O3:Cr, gamma-Al2O3:Cr and other phases using a combination of Raman spectroscopy and powder X-ray diffraction and we have also shown that they can be transformed to the alpha-Al2O3:Cr phase by annealing at 1400°C for 0.5 hour.

Code: ThP24	Time Slot/Poster Number: 137	Session: Solid State, Semiconductors and Nanoparticles II
Raman Spectroscopy Study of Various Types of Tourmalines
Luc Huy Hoang1; Nguyen Thi Minh Hien2; Xiang Bai Chen2; Nguyen Van Minh1; In-Sang Yang2
1Hanoi National University of Education, Hanoi, Viet Nam; 2Department of Physics and Division of Nano-Science, Ewha Womans University, Seoul, Korea
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Summary
We present both polarized and unpolarized Raman scattering studies of seven tourmalines from different geological environments in Vietnam. These tourmalines, according to their chemical compositions, can be classified into four groups: G1, liddicoatite; G2, elbaite; G3, uvite; and G4, feruvite.

Code: ThP24	Time Slot/Poster Number: 138	Session: Solid State, Semiconductors and Nanoparticles II
Hydrogen Storage in tri-Methylamine Clathrates
Seetharama Prasad Pinnelli1; Takeshi Sugahara3; E Dendy Sloan2; Amadeu K Sum2; Carolyn A Koh2
1National Geophysical Research Institute, Hyderabad, India; 2Colorado School of Mines, Golden, USA; 3Osaka University, Osaka, Japan
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Summary
Hydrogen storage in clathrate and semi-clathrates is an active area of research. In this study we show that the hydrogen can be enclathrated in vacant cages of trimethylamine hydrates. Further, there is no structural transition in this double hydrate system.

Code: ThP24	Time Slot/Poster Number: 139	Session: Solid State, Semiconductors and Nanoparticles II
Investigation of Phonon Band Gap, Heat Capacity and Raman Active Phonons in BaWO4 Crystal
Jun Suda1; Petr Zverev2
1Kushiro National College of Technology, Kushiro, Japan; 2A.M. Prokhorov GPI Russian Academy of Sciences, Moscow, Russia
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Summary
The phonon-dispersion relations for BaWO4 crystal were calculated using the lattice dynamical calculations approach. Using these results, the temperature dependence of the heat capacity was calculated and it corresponds well to the experimental data. Raman linewidth for high-frequency internal vibronic mode and low-frequency mode was analyzed using TDOS due to the cubic term in anharmonic interactions, respectively. The calculated results well describe the observed data in the temperature range 15-300 K. It proves the presence of a clearly large phonon band gap in the PDOS that produces a difference in anharmonic effects for high- and low-frequency modes.

Code: ThP24	Time Slot/Poster Number: 141	Session: Solid State, Semiconductors and Nanoparticles II
Biaxial Stress Measurement Through Polarized Oblique Incidence Raman Spectroscopy
Alexandre Frigout1; Christophe Licitra2; Razvigor Ossikovski1
1LPICM, Ecole Polytechnique, CNRS UMR-7647, Palaiseau, France; 2CEA, LETI, MINATEC, F38054, Grenoble, France
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Summary
We have shown that, by combining oblique incidence Raman scattering geometry with a polarization control of the incident and scattered radiations, it is possible to fully determine the biaxial stress tensor in strained Si-based structures. The method is robust and sample-preparation-free and has an estimated accuracy of ±50 MPa.

Code: ThP24	Time Slot/Poster Number: 142	Session: Solid State, Semiconductors and Nanoparticles II
Sliding Wear of Silicon Carbide: Measurement of the Thermal Conductivity via Raman Spectroscopy
Volker Presser1, 2; Marco Deluca3; Christoph Berthold2; Klaus Georg2
1Drexel University, Philadelphia, USA; 2Eberhard-Karls-Universität, Tübingen, Germany; 3Montanuniversität Leoben, Leoben, Austria
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Summary
In this study, we report the significant decrease in the thermal conductivity of worn silicon carbide surfaces. Mechanical and chemical degradation during sliding contact and scratch tests is demonstrated to produce a tribolayer comprising nanosized SiC wear debris which is highly strained and partially transformed into silica and small amounts of carbon. Contactless measurement of the thermal conductivity of both, tribolayers and separated SiC wear debris was studied by means of Raman spectroscopy. In both cases, the measured thermal conductivity was several orders of magnitude lower after tribologcial contact compared to the bulk silicon carbide.

Code: ThP24	Time Slot/Poster Number: 143	Session: Solid State, Semiconductors and Nanoparticles II
Vibrational Studies on Conformational Preferences of Terpinene Isomers in the Equilibrium Gas and Condensed Phases
Katarzyna M. Marzec1; Igor Reva2; Rui Fausto2; Kamilla Malek1; Leonard Proniewicz1
1Faculty of Chemistry, Jagiellonian University, Krakow, Poland; 2Department of Chemistry, University of Coimbra, Coimbra, Portugal
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Summary
alpha- and gamma- terpinenes are characterized by one conformationally relevant internal rotation axis, which corresponds to the rotation of the isopropyl group. The DFT(B3LYP)/6311++G(d,p) calculations led to identification of three minima on the molecules’ potential energy surfaces corresponding to the Trans, Gauche+ and Gauche− conformers. The Raman and FTIR-ATR data indicate that the Gauche forms become considerably stabilized in relation to the Trans conformer in the liquid phase at room temperature, comparison with the matrix data obtained for monomeric molecules of the studied compounds isolated in cryogenic argon and/or xenon matrices.

Code: ThP24	Time Slot/Poster Number: 144	Session: Solid State, Semiconductors and Nanoparticles II
Studies of Strain in Heterostructures GaAs/GaAs, GaAs:C/GaAs and GaAs:Si/GaAs by Spectroscopy μ-Raman
Jesus Fabian Jurado1; John Eder Sanchez1; Carlos Vargas Hernández1; Francisco Racedo Niebles2
1Universidad Nacional de Colombia, Manizales , Colombia; 2Universidad del Atlantico, Barranquilla, Colombia
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Summary
GaAs, GaAs:Si and GaAs:C films were deposited on GaAs substrates by MOCVD technique. The vibrational study of the heterostructures was performed by µ-Raman technique at different temperatures. The spectral information was used to determine the strain caused in GaAs heterostructure because of the inclusion Si and C. Raman spectra show a shift towards lower energy values as temperature increases. The modes of vibration and the shift is associated with the effort tensile in the lattice caused by the difference in thermal expansion coefficients between film and substrate, this tension has been bigger for the film doped with carbon.

Code: ThP24	Time Slot/Poster Number: 145	Session: Solid State, Semiconductors and Nanoparticles II
Spectral Broadening and Stokes to Anti-Stokes Intensity Ratio in Phonon Raman Scattering
Junji Watanabe
Graduate School of Frontier Biosciences, Suita, Japan
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Summary
We investigate the Stokes to anti-Stokes intensity ratio for a phonon mode in TiO2 (rutile) crystal. We find that the usual relation based on the canonical distribution does not hold for each frequency within a spectral broadening. The present result indicates that the irreversible dissipation is essential to understand the origin of the spectral broadening in phonon Raman scattering.

Code: ThP24	Time Slot/Poster Number: 146	Session: Solid State, Semiconductors and Nanoparticles II
Spectroscopic investigations on the structure of tin-silica glass ceramic systems doped with rare earth ions
T.V. Tran1; C. Kinowski2; O. Cristini2; B. Capoen2; M. Bouazaoui2; P. Roussel3; S. Berneschi4; G. Righini4; M. Ferrari5; S.N.B. Bhaktha6; S. Turrell1
1LASIR (CNRS, UMR 8516) Université Lille 1, Villeneuve d'Ascq, France; 2PhLAM (CNRS, UMR 8523) Université Lille 1, Villeneuve d'Ascq, France; 3UCCS (CNRS, UMR 8181), ENSCL, Villeneuve d'Ascq, France; 4MDF Lab., IFAC-CNR, Florence, Italy; 5CSMFO Lab., IFN-CNR, Trento, Italy; 6LPMC (CNRS UMR6622 ) Université Antipolis, Nice, France
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Summary
SnO2 is a wide-band-gap semiconductor (Eg = 3.6 eV) that is studied for many applications. SnO2 nanocrystals embedded in SiO2 glass matrices of bulk dimensions, activated with rare-earth (RE) elements, have been extensively researched, with a particular interest toward integrated optical (IO) devices. This work describes the studies on tin–silicate glass ceramic samples which are fabricated by the sol-gel technique. Both bulks and planar waveguides were elaborated with a concentration of tin oxide SnO2 ranging from 4 to 30 % mol. Spectroscopic investigations are carried out mainly using Raman, Photoluminescence and XRD techniques.

Code: ThP24	Time Slot/Poster Number: 147	Session: Solid State, Semiconductors and Nanoparticles II
Raman Spectra and Structure of Silicon–Oxygen Groups in Crystalline, Liquid, and Glassy Mg2SiO4
Vladislav Shukshin; Yuri Voronko; Alexandr Sobol
A.M. Prokhorov General Physics Institute of RAS, Moscow, Russian Federation
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Summary
The Raman spectra of magnesium orthosilicate at temperatures from 300 to 2170 K were recorded and they have shown that liquid magnesium orthosilicate can be supercooled to 1600 K and can be prepared in the form of glass at quenching rates above 400 K/s. Analysis of Raman results indicates that, in contrast to crystalline Mg2SiO4, liquid and glassy magnesium orthosilicate contains not only isolated [SiO4]4–-groups but also polymerized anions made up of corner-shared [SiO4]-tetrahedra. This accounts for the observed deep (down to 600 K) supercooling and vitrification of liquid magnesium orthosilicate.

Code: ThP24	Time Slot/Poster Number: 148	Session: Solid State, Semiconductors and Nanoparticles II
Single-Walled Carbon Nanotubes and Dispersed Nanodiamond Hybrids: Structure and Hierarchical Defects Evolution by Irradiation
Sanju Gupta2; Adam Schuttler1; John Farmer3
1University of Missouri, Columbia, MO; 2University of Pennsylvania, Philadelphia, PA; 3MURR and University of Missouri, Columbia, MO
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Summary
The structure and physical properties of novel nanocarbon hybrids of single-walled carbon nanotubes (SWCNT) and ultradispersed diamond (UDD) forming truly tetragonal-trigonal nanocomposite ensemble with gamma irradiation are investigated. The experiments show that irradiation generates microscopic defects in a hierarchical manner much below amorphization threshold. In the interpretation, the possibilities for this complex system are: 1) difference in electronegativity of sp2 C (SWCNT) and sp3 C (UDD) result in charge transfer; 2) sp2 C misalignment at the interface; and 3) nanotubes stabilization by UDD. The electrical properties seem to be relatively more labile to irradiation effects than structural and vibrational properties.